Silicon GW correction

Concerns issues with computing quasiparticle corrections to the DFT eigenvalues - i.e., the self-energy within the GW approximation (-g n), or considering the Hartree-Fock exchange only (-x)

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jbae
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Joined: Tue Jun 26, 2012 4:42 pm
Location: Seoul, Korea

Silicon GW correction

Post by jbae » Tue Jun 26, 2012 5:13 pm

I calculated quasi-particle energy of bulk silicon within the GW approximation using PPA (same as tutorials)
Obtained quasi-particle correction is very similar to that of tutorials. Below is some part of o.qp file.

# K-point Band Eo E-Eo Sc(Eo)
....
1.00000 1.00000 -11.93283 -2.62226 4.12997
1.000000 2.000000 0.000000 0.321444 1.536214
1.000000 3.000000 0.000000 0.321384 1.536104
1.000000 4.000000 0.000000 0.323863 1.538630 : valance band maximum (VBM)
1.000000 5.000000 2.557771 1.538283 -2.709212 : conduction band minimum (CBM)
1.000000 6.000000 2.557771 1.539280 -2.708224
....
Is it reasonable that qp energy correction(E-Eo) of both VBM and CBM are positive?
As I know, qp energy correction of VBM is negative and that of CBM is positvite.
Jaehyun Bae
Department of Physics and Astronomy, Seoul National University, Seoul, Korea

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Daniele Varsano
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Re: Silicon GW correction

Post by Daniele Varsano » Wed Jun 27, 2012 3:05 pm

Dear Jaehyun Bae,
As I know, qp energy correction of VBM is negative and that of CBM is positvite.
this is what very often happen, but it is not a rule.
In your case, I think that the results you get are consistent with other similar calculations:
see for instances these papers:
Godby,Schluter,Sham, PRB 37, 10159, 1988, available here:
http://www-users.york.ac.uk/~rwg3/Paper ... 20PRB).pdf
or:
http://www.jim.or.jp/journal/e/pdf3/51/12/2150.pdf

Cheers,

Daniele
Dr. Daniele Varsano
S3-CNR Institute of Nanoscience and MaX Center, Italy
MaX - Materials design at the Exascale
http://www.nano.cnr.it
http://www.max-centre.eu/

Sheleon
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Joined: Tue Jun 12, 2012 9:02 am

Re: Silicon GW correction

Post by Sheleon » Wed Jul 11, 2012 11:35 am

Dear Jaehyun Bae and Daniele
I think the reason for both of the VBM and CBM are positive is the calculation is not converged. When i learn the Si case of the tutorials, at first, VBM and CBM are both positive indeedly, but with rasing the parameter NGsBlkXp, the VBM will turn into negative and CBM is still positive with a relatviely small value.
And The fig.1 from the second reference which Daniele listed, they also obtained a negative correction to the VBM and a positive correction to CBM.
Since i am also a new beginer of Yambo, if there someting wrong, please let me know~

Cheers!

Sheleon
Phd student
Phys Department
Shanghai JiaoTong university, Shanghai, China.

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Daniele Varsano
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Re: Silicon GW correction

Post by Daniele Varsano » Wed Jul 11, 2012 1:27 pm

Dear Sheleon,
nothing wrong in what you write.
As you argued, it is important to stress that the tutorial examples are usually out-of-convergence.
We often use this examples in the Yambo schools, and they are thought to be run in simple PC in a reasonable time,
and the parameter they should *not* be taken for production runs.
About the references I listed, you are right that the VBM has a general negative corrections, even if
at the gamma point LDA and GW are practically the same, with a very small positive correction, at
least looking at table 1. Next it looks that the sign corrections changes changing methodology, pseudopotentials...etc.

Cheers,

Daniele
Dr. Daniele Varsano
S3-CNR Institute of Nanoscience and MaX Center, Italy
MaX - Materials design at the Exascale
http://www.nano.cnr.it
http://www.max-centre.eu/

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